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IXSM30N60A IGBT Transistor

The IXSM30N60A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSM30N60A transistor as follows.

Circuit diagram symbol of the IXSM30N60A transistor

IXSM30N60A Transistor Specification

Transistor Code IXSM30N60A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO204AA
Collector Power Dissipation (Maximum) Pc 200W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 2760pF
Rise Time 60

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