IXSM30N60 IGBT Transistor

The IXSM30N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSM30N60 transistor as follows.

IXSM30N60 Transistor Specification

Transistor Code		IXSM30N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO204AA
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2760pF
Rise Time		60

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