IXSK50N60BD1 IGBT Transistor

The IXSK50N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSK50N60BD1 transistor as follows.

IXSK50N60BD1 Transistor Specification

Transistor Code		IXSK50N60BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		150 oC

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