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IXSK35N120BD1 IGBT Transistor

The IXSK35N120BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSK35N120BD1 transistor as follows.

Circuit diagram symbol of the IXSK35N120BD1 transistor

IXSK35N120BD1 Transistor Specification

Transistor Code IXSK35N120BD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3.6V
Collector Current (Maximum) IC 70A
Rise Time 180

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