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IXSH45N120B IGBT Transistor

The IXSH45N120B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH45N120B transistor as follows.

Circuit diagram symbol of the IXSH45N120B transistor

IXSH45N120B Transistor Specification

Transistor Code IXSH45N120B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 75A
Rise Time 380

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