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IXSH45N120 IGBT Transistor

The IXSH45N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH45N120 transistor as follows.

Circuit diagram symbol of the IXSH45N120 transistor

IXSH45N120 Transistor Specification

Transistor Code IXSH45N120
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC

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