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IXSH35N100A IGBT Transistor

The IXSH35N100A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH35N100A transistor as follows.

Circuit diagram symbol of the IXSH35N100A transistor

IXSH35N100A Transistor Specification

Transistor Code IXSH35N100A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1000V
Collector Current (Maximum) IC 70A
Operating Junction Temperature (Maximum) 150 oC

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