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IXSH30N60CD1 IGBT Transistor

The IXSH30N60CD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH30N60CD1 transistor as follows.

Circuit diagram symbol of the IXSH30N60CD1 transistor

IXSH30N60CD1 Transistor Specification

Transistor Code IXSH30N60CD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 200W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 55A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 3100pF
Rise Time 30

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