IXSH30N60BD1 IGBT Transistor

The IXSH30N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH30N60BD1 transistor as follows.

IXSH30N60BD1 Transistor Specification

Transistor Code		IXSH30N60BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	55A
Operating Junction Temperature (Maximum)		150 oC

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