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Home » Electronics » IGBT » IXSH30N60B Transistor

IXSH30N60B IGBT Transistor

The IXSH30N60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH30N60B transistor as follows.

Circuit diagram symbol of the IXSH30N60B transistor

IXSH30N60B Transistor Specification

Transistor Code IXSH30N60B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector Current (Maximum) IC 55A
Operating Junction Temperature (Maximum) 150 oC

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