IXSH20N60U1 IGBT Transistor

The IXSH20N60U1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH20N60U1 transistor as follows.

IXSH20N60U1 Transistor Specification

Transistor Code		IXSH20N60U1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1800pF
Rise Time		100

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