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IXSH15N120AU1 IGBT Transistor

The IXSH15N120AU1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH15N120AU1 transistor as follows.

Circuit diagram symbol of the IXSH15N120AU1 transistor

IXSH15N120AU1 Transistor Specification

Transistor Code IXSH15N120AU1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 150W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 4V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 1800pF
Rise Time 100

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