IXSH10N60B2D1 IGBT Transistor

The IXSH10N60B2D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH10N60B2D1 transistor as follows.

IXSH10N60B2D1 Transistor Specification

Transistor Code		IXSH10N60B2D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	10A
Rise Time		165

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