IXSH10N120A IGBT Transistor

The IXSH10N120A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSH10N120A transistor as follows.

IXSH10N120A Transistor Specification

Transistor Code		IXSH10N120A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		150 oC

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