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IXSA20N60B2D1 IGBT Transistor

The IXSA20N60B2D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSA20N60B2D1 transistor as follows.

Circuit diagram symbol of the IXSA20N60B2D1 transistor

IXSA20N60B2D1 Transistor Specification

Transistor Code IXSA20N60B2D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263(D2PAK)
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 35A
Rise Time 126

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