IXSA16N60 IGBT Transistor

The IXSA16N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSA16N60 transistor as follows.

IXSA16N60 Transistor Specification

Transistor Code		IXSA16N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	32A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		920pF
Rise Time		30

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