IXSA12N60AU1 IGBT Transistor

The IXSA12N60AU1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXSA12N60AU1 transistor as follows.

IXSA12N60AU1 Transistor Specification

Transistor Code		IXSA12N60AU1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	24A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		30

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