IXGY2N120 IGBT Transistor

The IXGY2N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGY2N120 transistor as follows.

IXGY2N120 Transistor Specification

Transistor Code		IXGY2N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA(D_PAK)
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	5A
Rise Time		360

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