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IXGX82N120B3 IGBT Transistor

The IXGX82N120B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGX82N120B3 transistor as follows.

Circuit diagram symbol of the IXGX82N120B3 transistor

IXGX82N120B3 Transistor Specification

Transistor Code IXGX82N120B3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package PLUS247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 230A
Rise Time 100

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