IXGX75N250 IGBT Transistor

The IXGX75N250 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGX75N250 transistor as follows.

IXGX75N250 Transistor Specification

Transistor Code		IXGX75N250
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		PLUS247
Collector-Emitter Voltage (Maximum)	VCE	2500V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	170A
Rise Time		455

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