IXGX32N170H1 IGBT Transistor

The IXGX32N170H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGX32N170H1 transistor as follows.

IXGX32N170H1 Transistor Specification

Transistor Code		IXGX32N170H1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		PLUS247
Collector-Emitter Voltage (Maximum)	VCE	1700V
Collector-Emitter Saturation Voltage	VCE(on)	3.3V
Collector Current (Maximum)	IC	75A
Rise Time		250

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