IXGV25N250S IGBT Transistor

The IXGV25N250S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGV25N250S transistor as follows.

IXGV25N250S Transistor Specification

Transistor Code		IXGV25N250S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector-Emitter Voltage (Maximum)	VCE	2500V
Collector-Emitter Saturation Voltage	VCE(on)	2.9V
Collector Current (Maximum)	IC	60A

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