IXGT6N170AHV IGBT Transistor

The IXGT6N170AHV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT6N170AHV transistor as follows.

IXGT6N170AHV Transistor Specification

Transistor Code		IXGT6N170AHV
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	7V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		20
Rise Time		40

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