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IXGT6N170A IGBT Transistor

The IXGT6N170A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT6N170A transistor as follows.

Circuit diagram symbol of the IXGT6N170A transistor

IXGT6N170A Transistor Specification

Transistor Code IXGT6N170A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 7V
Collector Current (Maximum) IC 6A
Rise Time 32

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