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IXGT64N60B3 IGBT Transistor

The IXGT64N60B3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT64N60B3 transistor as follows.

Circuit diagram symbol of the IXGT64N60B3 transistor

IXGT64N60B3 Transistor Specification

Transistor Code IXGT64N60B3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC A
Rise Time 88

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