IXGT60N60C3D1 IGBT Transistor

The IXGT60N60C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT60N60C3D1 transistor as follows.

IXGT60N60C3D1 Transistor Specification

Transistor Code		IXGT60N60C3D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	75A
Rise Time		50

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