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IXGT60N60C3D1 IGBT Transistor

The IXGT60N60C3D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT60N60C3D1 transistor as follows.

Circuit diagram symbol of the IXGT60N60C3D1 transistor

IXGT60N60C3D1 Transistor Specification

Transistor Code IXGT60N60C3D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 75A
Rise Time 50

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