IXGT60N60 IGBT Transistor

The IXGT60N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT60N60 transistor as follows.

IXGT60N60 Transistor Specification

Transistor Code		IXGT60N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector Power Dissipation (Maximum)	Pc	300W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		50

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