IXGT45N120 IGBT Transistor

The IXGT45N120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT45N120 transistor as follows.

IXGT45N120 Transistor Specification

Transistor Code		IXGT45N120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	75A
Rise Time		390

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