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Home » Electronics » IGBT » IXGT39N60BD1 Transistor

IXGT39N60BD1 IGBT Transistor

The IXGT39N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT39N60BD1 transistor as follows.

Circuit diagram symbol of the IXGT39N60BD1 transistor

IXGT39N60BD1 Transistor Specification

Transistor Code IXGT39N60BD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 76A
Rise Time 200

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