IXGT39N60BD1 IGBT Transistor

The IXGT39N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT39N60BD1 transistor as follows.

IXGT39N60BD1 Transistor Specification

Transistor Code		IXGT39N60BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	76A
Rise Time		200

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