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IXGT32N60C IGBT Transistor

The IXGT32N60C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT32N60C transistor as follows.

Circuit diagram symbol of the IXGT32N60C transistor

IXGT32N60C Transistor Specification

Transistor Code IXGT32N60C
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 60A
Rise Time 55

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