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IXGT32N170 IGBT Transistor

The IXGT32N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT32N170 transistor as follows.

Circuit diagram symbol of the IXGT32N170 transistor

IXGT32N170 Transistor Specification

Transistor Code IXGT32N170
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 3.3V
Collector Current (Maximum) IC 75A
Rise Time 250

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