IXGT30N60B IGBT Transistor

The IXGT30N60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT30N60B transistor as follows.

IXGT30N60B Transistor Specification

Transistor Code		IXGT30N60B
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	60A
Rise Time		100

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