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IXGT2N250 IGBT Transistor

The IXGT2N250 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT2N250 transistor as follows.

Circuit diagram symbol of the IXGT2N250 transistor

IXGT2N250 Transistor Specification

Transistor Code IXGT2N250
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 2500V
Collector-Emitter Saturation Voltage VCE(on) 3.1V
Collector Current (Maximum) IC 5.5A

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