IXGT28N60D1 IGBT Transistor

The IXGT28N60D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT28N60D1 transistor as follows.

IXGT28N60D1 Transistor Specification

Transistor Code		IXGT28N60D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO258
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		2

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