IXGT28N30 IGBT Transistor

The IXGT28N30 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT28N30 transistor as follows.

IXGT28N30 Transistor Specification

Transistor Code		IXGT28N30
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	300V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1500pF
Rise Time		15

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