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IXGT25N250HV IGBT Transistor

The IXGT25N250HV is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT25N250HV transistor as follows.

Circuit diagram symbol of the IXGT25N250HV transistor

IXGT25N250HV Transistor Specification

Transistor Code IXGT25N250HV
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268-2L
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 2500V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.9V
Collector Current (Maximum) IC 60A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 75
Rise Time 233

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