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IXGT15N120BD1 IGBT Transistor

The IXGT15N120BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT15N120BD1 transistor as follows.

Circuit diagram symbol of the IXGT15N120BD1 transistor

IXGT15N120BD1 Transistor Specification

Transistor Code IXGT15N120BD1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 160

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