IXGT10N170 IGBT Transistor

The IXGT10N170 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT10N170 transistor as follows.

IXGT10N170 Transistor Specification

Transistor Code		IXGT10N170
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	1700V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	20A
Rise Time		495

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