IXGR40N60BD1 IGBT Transistor

The IXGR40N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGR40N60BD1 transistor as follows.

IXGR40N60BD1 Transistor Specification

Transistor Code		IXGR40N60BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	70A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		120

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