IXGR32N60CD1 IGBT Transistor

The IXGR32N60CD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGR32N60CD1 transistor as follows.

IXGR32N60CD1 Transistor Specification

Transistor Code		IXGR32N60CD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	45A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		55

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