IXGR32N60C IGBT Transistor

The IXGR32N60C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGR32N60C transistor as follows.

IXGR32N60C Transistor Specification

Transistor Code		IXGR32N60C
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	45A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		55

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