IXGQ90N27PB IGBT Transistor

The IXGQ90N27PB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGQ90N27PB transistor as follows.

IXGQ90N27PB Transistor Specification

Transistor Code		IXGQ90N27PB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	270V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	90A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		180
Rise Time		43

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