IXGQ85N33PCD1 IGBT Transistor

The IXGQ85N33PCD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGQ85N33PCD1 transistor as follows.

IXGQ85N33PCD1 Transistor Specification

Transistor Code		IXGQ85N33PCD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	330V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	85A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		155
Rise Time		43

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