IXGQ240N30PB IGBT Transistor

The IXGQ240N30PB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGQ240N30PB transistor as follows.

IXGQ240N30PB Transistor Specification

Transistor Code		IXGQ240N30PB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	300V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	240A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		435
Rise Time		70

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