IXGP8N100 IGBT Transistor

The IXGP8N100 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGP8N100 transistor as follows.

IXGP8N100 Transistor Specification

Transistor Code		IXGP8N100
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		2.7

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