IXGP30N60B4D1 IGBT Transistor

The IXGP30N60B4D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGP30N60B4D1 transistor as follows.

IXGP30N60B4D1 Transistor Specification

Transistor Code		IXGP30N60B4D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	56A
Rise Time		88

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