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IXGP30N60B4D1 IGBT Transistor

The IXGP30N60B4D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGP30N60B4D1 transistor as follows.

Circuit diagram symbol of the IXGP30N60B4D1 transistor

IXGP30N60B4D1 Transistor Specification

Transistor Code IXGP30N60B4D1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 56A
Rise Time 88

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