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IXGP12N60B IGBT Transistor

The IXGP12N60B is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGP12N60B transistor as follows.

Circuit diagram symbol of the IXGP12N60B transistor

IXGP12N60B Transistor Specification

Transistor Code IXGP12N60B
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO220
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 24A
Rise Time 120

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