The IXGN82N120B3H1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the IXGN82N120B3H1 transistor as follows.
| Transistor Code | IXGN82N120B3H1 | |
|---|---|---|
| Transistor Type | IGBT | |
| IGBT Control Channel Type | N-Channel | |
| Package | SOT227 | |
| Collector-Emitter Voltage (Maximum) | VCE | 1200V |
| Collector-Emitter Saturation Voltage | VCE(on) | 3.2V |
| Collector Current (Maximum) | IC | 145A |
| Rise Time | 100 | |
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