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IXGN60N60C2 IGBT Transistor

The IXGN60N60C2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN60N60C2 transistor as follows.

Circuit diagram symbol of the IXGN60N60C2 transistor

IXGN60N60C2 Transistor Specification

Transistor Code IXGN60N60C2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SOT227B
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 75A
Rise Time 35

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