IXGN50N60BD3 IGBT Transistor

The IXGN50N60BD3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN50N60BD3 transistor as follows.

IXGN50N60BD3 Transistor Specification

Transistor Code		IXGN50N60BD3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227B
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	75A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		150

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