The IXGN50N60BD3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the IXGN50N60BD3 transistor as follows.
Transistor Code | IXGN50N60BD3 | |
---|---|---|
Transistor Type | IGBT | |
IGBT Control Channel Type | N-Channel | |
Package | SOT227B | |
Collector-Emitter Voltage (Maximum) | VCE | 600V |
Collector Current (Maximum) | IC | 75A |
Operating Junction Temperature (Maximum) | 175 oC | |
Rise Time | 150 |
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